NTZD3154NT1G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTZD3154NT1G

Description:

MOSFET 2N-CH 20V 540MA SOT563

Stock:

5523

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.09

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Parameters

Current at 25 ° C - continuous drain (Id)

540mA

Drain source voltage (Vdss)

20V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

2.5nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

150pF @ 16V

On resistance (maximum) for different Ids and Vgs

550 mΩ @ 540mA,4.5V

Power - maximum

250mW

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT,bulk

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-563,SOT-666

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTZD3154NT1G.pdf

NTZD3154NT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5523,Price reference "real-time change" China/Hongkong。 NTZD3154NT1G package/specs, Download NTZD3154NT1G、Datasheet。